Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETs

Journal: Applied Physics Letters

Published: 2018-08-10

DOI: 10.1063/1.5039886

Affiliations: 2

Authors: 5

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Institutions FC
Advantest Laboratories Ltd., Japan 0.80
Center for Nano Materials and Technology (CNMT), JAIST, Japan 0.20

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