Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change

Journal: Applied Physics Letters

Published: 2018-05-02

DOI: 10.1063/1.5029327

Affiliations: 2

Authors: 7

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Institutions FC
Department of Materials Science, Tohoku University, Japan 0.86
Department of Electronic Engineering, HYU, South Korea 0.14

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