Prediction of multiband luminescence due to the gallium vacancy–oxygen defect complex in GaN

Journal: Applied Physics Letters

Published: 2018-06-27

DOI: 10.1063/1.5026751

Affiliations: 6

Authors: 6

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Institutions FC
Department of Physics, HIT, China 0.25
Department of Materials, ICL, United Kingdom (UK) 0.17
UCL Materials Chemistry Centre (MCC), United Kingdom (UK) 0.17
UCL Department of Chemistry, United Kingdom (UK) 0.17
STFC Scientific Computing Department (SCD), United Kingdom (UK) 0.17
Department of Materials Science and Engineering (MSE), Yonsei University, South Korea 0.08

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