Pyroelectricity of silicon-doped hafnium oxide thin films

Journal: Applied Physics Letters

Published: 2018-04-02

DOI: 10.1063/1.5023390

Affiliations: 3

Authors: 8

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Institutions FC
Institut für Experimentelle Physik, TUBAF, Germany 0.50
NaMLab gGmbH, Germany 0.44
Institute of Semiconductors and Microsystems (IHM), TU Dresden, Germany 0.06

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