Temperature dependent electrical properties of pulse laser deposited Au/Ni/β-(AlGa)2O3 Schottky diode

Journal: Applied Physics Letters

Published: 2018-02-13

DOI: 10.1063/1.5019310

Affiliations: 2

Authors: 9

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Institutions FC
State Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, China 0.78
No.46 Research Institute of CETC (CETC46), China 0.22

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