Phosphorus oxide gate dielectric for black phosphorus field effect transistors

Journal: Applied Physics Letters

Published: 2018-04-23

DOI: 10.1063/1.5011424

Affiliations: 4

Authors: 10

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Institutions FC
Department of Electrical and Computer Engineering (ECE), McGill University, Canada 0.40
Institute of Chemistry of Organometallic Compounds (ICCOM), CNR, Italy 0.30
Department of Materials Science and Engineering, McMaster University, Canada 0.20
National Enterprise for NanoScience and NanoTechnology (NEST), Italy 0.10