High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange

Journal: Applied Physics Letters

Published: 2017-12-12

DOI: 10.1063/1.5010982

Affiliations: 2

Authors: 5

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Research Highlight

High-quality, multilayer graphene key to advanced electronic devices

© LAGUNA DESIGN/Getty

© LAGUNA DESIGN/Getty

Scientists in Japan have developed a new technique for growing multilayer graphene crystals on substrates that could be used in advanced electronic devices.

Materials like thick multilayer graphene (MLG) crystals can handle the large currents and high temperatures in advanced electronic devices. But current vapor deposition techniques for growing MLG introduce imperfections into its crystal structure, reducing the material’s performance.

A team of scientists in Japan, including researchers at the University of Tsukuba, has developed a technique that uses nickel-induced layer exchange to grow high-quality, uniform crystals of MLG directly on an insulating material.

By incorporating aluminium oxide and silicon oxide interlayers between the carbon and nickel layers, the team was able to control the growth of MLG crystals, opening the door for applications that combine advanced electronic devices with carbon materials.

 

Supported content

  1. Appl. Phys. Lett. 111, 243104 (2017). doi: 10.1063/1.5010982
Institutions FC
Institute of Applied Physics, University of Tsukuba, Japan 0.60
Tsukuba Innovation Arena (TIA) Headquarters, AIST, Japan 0.40

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