Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(112¯0)

Journal: Applied Physics Letters

Published: 2018-01-04

DOI: 10.1063/1.5006435

Affiliations: 1

Authors: 5

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Institutions FC
Department of Electronic Science and Engineering, Kyoto University, Japan 1

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