Perpendicular magnetic tunnel junctions with Mn-modified ultrathin MnGa layer

Journal: Applied Physics Letters

Published: 2018-02-05

DOI: 10.1063/1.5002616

Affiliations: 4

Authors: 7

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Research Highlight

The latest spin on memory technologies

© republica/Getty

© republica/Getty

Scientists have developed an innovative technique that could lead to faster, more energy efficient memory devices with greater storage capacity.

Spintronic memory technologies based on the magnetic properties of spinning electrons are attracting attention for their superior data transfer and storage capacities compared with traditional electronic devices like hard disk drives.

However, the technology is expensive and current data storage capacities are limited. 

Now, Japanese scientists, including researchers from the WPI Advanced Institute for Materials Research, have developed a technique for improving the performance of magnetic random access memory (MRAM), spintronic devices constructed from two ferromagnetic plates separated by an insulating layer.

By inserting an ultrathin manganese film between the plates, the researchers enhanced the rate of electrons that tunnel through the insulating material from one plate to the other, as well as the alignment of their magnetic moments, leading to faster MRAM devices with increased storage capacity.

Supported content

  1. Appl. Phys. Lett. 112, 062402 (2018). doi: 10.1063/1.5002616
Institutions FC
WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Japan 0.64
Center for Spintronics Research Network (CSRN), Tohoku University, Japan 0.14
Department of Electronics, KIT, Japan 0.14
Department of Applied Physics, Tohoku University, Japan 0.07

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