Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

Journal: Nature Photonics

Published: 2020-03-16

DOI: 10.1038/s41566-020-0601-5

Affiliations: 9

Authors: 18

Go to article
Institutions Share
Center for Nanosciences and Nanotechnologies (C2N), France 0.47
JARA Fundamentals of Future Information Technology (JARA-FIT), Germany 0.11
Laboratory of Physics of Interfaces and Thin Films (LPICM), France 0.11
STMicroelectronics France, France 0.08
Jülich-Aachen Research Alliance (JARA), Germany 0.06
University of Leeds, United Kingdom (UK) 0.06
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), CNRS, France 0.06
CEA Laboratory of Electronics and Information Technology (LETI), France 0.03
Grenoble Alpes University (UGA), France 0.03

Return

Except where otherwise noted © 2021 Springer Nature Limited. All Rights Reserved.
partner of AGORA, HINARI, OARE, INASP, ORCID, CrossRef and COUNTER