The database server is currently not answering requests properly. Some pages are still available due to caching. We are investigating the situation and will keep you updated.

Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches

Journal: Nature Nanotechnology

Published: 2020-01-27

DOI: 10.1038/s41565-019-0623-7

Affiliations: 3

Authors: 10

Go to article
Institutions Share
KAIST Department of Physics, South Korea 0.70
Research Center for Functional Materials (RCFM), NIMS, Japan 0.20
KAIST Korea National NanoFab Center (NNFC), South Korea 0.10