Strain distributions and their influence on electronic structures of WSe-MoS laterally strained heterojunctions

Journal: Nature Nanotechnology

Published: 2018-01-15

DOI: 10.1038/s41565-017-0022-x

Affiliations: 8

Authors: 8

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Institutions FC
Department of Physics, UT Austin, United States of America (USA) 0.25
KAUST Physical Science and Engineering Division (PSE), Saudi Arabia 0.19
School of Applied and Engineering Physics (AEP), Cornell University, United States of America (USA) 0.19
IBM Thomas J. Watson Research Center, United States of America (USA) 0.13
School of Physics and Technology (SPT), WHU, China 0.06
Research Center for Applied Science, Academia Sinica, Taiwan 0.06
School of the Gifted Young (SCGY), USTC, China 0.06
Kavli Institute at Cornell for Nanoscale Science (KIC), Cornell University, United States of America (USA) 0.06

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