Steep-slope hysteresis-free negative capacitance MoS2 transistors

Journal: Nature Nanotechnology

Published: 2017-12-18

DOI: 10.1038/s41565-017-0010-1

Affiliations: 5

Authors: 11

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Institutions FC
School of Electrical and Computer Engineering (ECE), Purdue University, United States of America (USA) 0.44
Birck Nanotechnology Center (BNC), Purdue University, United States of America (USA) 0.32
National Nano Device Laboratories (NDL), NARLabs, Taiwan 0.18
Tsinghua National Laboratory for Information Science and Technology (TNList), China 0.03
Institute of Microelectronics (IMETU), Tsinghua, China 0.03

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