Nanometre-thin indium tin oxide for advanced high-performance electronics

Journal: Nature Materials

Published: 2019-08-12

DOI: 10.1038/s41563-019-0455-8

Affiliations: 3

Authors: 8

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Wuhan National High Magnetic Field Center, HUST, China 0.48
School of Optical and Electronic Information (OEI), HUST, China 0.48
MOE Key Laboratory of Microelectronic Devices and Circuits, PKU, China 0.04

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