A highly CMOS compatible hafnia-based ferroelectric diode

Journal: Nature Communications

Published: 2020-03-13

DOI: 10.1038/s41467-020-15159-2

Affiliations: 4

Authors: 22

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Institutions Share
Institute of Microelectronics (IME), CAS, China 0.77
East China Normal University (ECNU), China 0.14
Xi’an UniIC Semiconductors Co., Ltd., China 0.09

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