Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

Journal: Nature Communications

Published: 2018-04-13

DOI: 10.1038/s41467-018-03897-3

Affiliations: 5

Authors: 11

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Institutions FC
Department of Materials Science and Engineering, UC Berkeley, United States of America (USA) 0.36
NUS Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), Singapore 0.36
Molecular Foundry, LBNL, United States of America (USA) 0.14
College of Geographic and Biologic Information, NUPT, China 0.09
Materials Sciences Division (MSD), LBNL, United States of America (USA) 0.05

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