Origin of the Flat Band in Heavily Cs-Doped Graphene

Journal: ACS Nano

Published: 2019-12-20

DOI: 10.1021/acsnano.9b08622

Affiliations: 7

Authors: 11

Go to article
Institutions Share
II. Physical Institute (PH2), UoC, Germany 0.36
Elettra - Sincrotrone Trieste S.C.p.A., Italy 0.18
Department of Physical and Chemical Sciences (DSFC), UNIVAQ, Italy 0.09
Institute of Superconductors, Oxides and other Innovative Materials and Devices (SPIN), CNR, Italy 0.09
Research Center for Physics, LIPI, Indonesia 0.09
Department of Physics, Tohoku University, Japan 0.09
Laboratoire de Physique des Solides (LPS), France 0.09

Return

Except where otherwise noted © 2021 Springer Nature Limited. All Rights Reserved.
partner of AGORA, HINARI, OARE, INASP, ORCID, CrossRef and COUNTER