Robust Impact-Ionization Field-Effect Transistor Based on Nanoscale Vertical Graphene/Black Phosphorus/Indium Selenide Heterostructures
| Institutions | Share |
|---|---|
| National Laboratory of Solid State Microstructures (NLSSM), NJU, China | 0.50 |
| School of Electronic Science and Engineering, NJU, China | 0.50 |
