Robust Impact-Ionization Field-Effect Transistor Based on Nanoscale Vertical Graphene/Black Phosphorus/Indium Selenide Heterostructures

Journal: ACS Nano

Published: 2019-12-30

DOI: 10.1021/acsnano.9b06140

Affiliations: 2

Authors: 12

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Institutions Share
National Laboratory of Solid State Microstructures (NLSSM), NJU, China 0.50
School of Electronic Science and Engineering, NJU, China 0.50

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