Comment on “Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors”

Journal: ACS Nano

Published: 2019-08-27

DOI: 10.1021/acsnano.9b04225

Affiliations: 2

Authors: 4

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Institutions Share
Kotel'nikov Institute of Radio Engineering and Electronics (IRE), RAS, Russia 0.88
Nanotechnology Institute of Microelectronics (INME), RAS, Russia 0.13

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