Surface Modification of CdSe Quantum-Dot Floating Gates for Advancing Light-Erasable Organic Field-Effect Transistor Memories

Journal: ACS Nano

Published: 2018-08-28

DOI: 10.1021/acsnano.8b01413

Affiliations: 5

Authors: 5

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Institutions FC
Department of Energy Engineering, HYU, South Korea 0.45
Samsung Advanced Institute of Technology (SAIT), South Korea 0.20
Department of Chemical Engineering, POSTECH, South Korea 0.15
Polymer Research Institute (PRI), POSTECH, South Korea 0.15
Research Institute of Industrial Science, HYU, South Korea 0.05

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