Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate

Journal: ACS Nano

Published: 2018-02-09

DOI: 10.1021/acsnano.7b07653

Affiliations: 4

Authors: 7

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Institutions FC
UNM Center for High Technology Materials (CHTM), United States of America (USA) 0.50
UNM Department of Electrical and Computer Engineering (ECE), United States of America (USA) 0.29
UNM Department of Physics and Astronomy, United States of America (USA) 0.14
The University of New Mexico (UNM), United States of America (USA) 0.07

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