Computational Modeling of 2D Materials under High Pressure and Their Chemical Bonding: Silicene as Possible Field-Effect Transistor

Journal:
ACS Nano
Published:
DOI:
10.1021/acsnano.0c10609
Affiliations:
6
Authors:
5
Institutions Authors Share
Skolkovo Institute of Science and Technology (Skoltech), Russia
2.000000
0.40
Istituto di Scienze e Tecnologie Chimiche "Giulio Natta" (SCITEC), CNR, Italy
1.000000
0.20
Institute of Solid State Chemistry and Mechanochemistry (ISSC MС), SB RAS, Russia
0.500000
0.10
Taif University, Saudi Arabia
0.500000
0.10
Rice University, United States of America (USA)
0.500000
0.10
Catholic University of Louvain (UCLouvain), Belgium
0.500000
0.10