Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrinsic Magnetic Topological Insulator MnBi2Te4 Device

Journal: Nano Letters

Published: 2019-12-16

DOI: 10.1021/acs.nanolett.9b04555

Affiliations: 5

Authors: 19

Go to article
Institutions Share
National Laboratory of Solid State Microstructures (NLSSM), NJU, China 0.89
Beijing National Laboratory for Condensed Matter Physics, IOP CAS, China 0.05
School of Physics and Astronomy, SJTU, China 0.03
School of Electronic Science and Engineering, NJU, China 0.03