Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet

Journal: Nano Letters

Published: 2019-11-22

DOI: 10.1021/acs.nanolett.9b03517

Affiliations: 3

Authors: 12

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Institutions Share
Ioffe Institute, RAS, Russia 0.88
University of Notre Dame (ND), United States of America (USA) 0.08
Laboratoire Charles Coulomb (L2C), France 0.04

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