In Situ Thermal Atomic Layer Etching for Sub-5 nm InGaAs Multigate MOSFETs

Journal: Nano Letters

Published: 2019-08-14

DOI: 10.1021/acs.nanolett.9b01525

Affiliations: 2

Authors: 8

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Institutions Share
Department of Chemistry, CU-Boulder, United States of America (USA) 0.63
MIT Microsystems Technology Laboratories (MTL), United States of America (USA) 0.38

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