Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates

Journal: Nano Letters

Published: 2018-06-13

DOI: 10.1021/acs.nanolett.8b01091

Affiliations: 7

Authors: 12

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Institutions FC
Department of Mechanical Engineering (ME), CU, United States of America (USA) 0.54
U.S. Army ARL Sensors and Electron Devices Directorate (SEDD), United States of America (USA) 0.13
Samsung-SKKU Graphene Center (SSGC), South Korea 0.13
Division of Physics and Applied Physics (PAP), NTU, Singapore 0.08
General Technical Services LLC (GTS), United States of America (USA) 0.04
National Laboratory of Solid State Microstructures (NLSSM), NJU, China 0.04
College of Engineering and Applied Sciences, NJU, China 0.04

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