Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2 Field Effect Transistors

Journal:
Nano Letters
Published:
DOI:
10.1021/acs.nanolett.1c00180
Affiliations:
2
Authors:
10
Institutions Authors Share
Yonsei University, South Korea
9.000000
0.90
Institute for Basic Science (IBS), South Korea
1.000000
0.10