Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide

Published: 2020-07-13

Affiliations: 5

Authors: 11

Institutions	Authors	Share
Division of Physics and Applied Physics (PAP), NTU, Singapore		0.41
School of Mathematical and Physical Sciences, UTS, Australia		0.27
School of Materials Science and Engineering, HIT, China		0.18
Paris Institute of Nanosciences (INSP), France		0.09
The Photonics Institute (TPI), Singapore		0.05

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