Ambipolar Channel p-TMD/n-Ga2O3 Junction Field Effect Transistors and High Speed Photo-sensing in TMD Channel

Journal:
Advanced Materials
Published:
DOI:
10.1002/adma.202103079
Affiliations:
2
Authors:
7
Institutions Authors Share
Yonsei University, South Korea
5.000000
0.71
Korea Institute of Science and Technology (KIST), South Korea
2.000000
0.29