Highly Scalable and Robust Mesa‐Island‐Structure Metal‐Oxide Thin‐Film Transistors and Integrated Circuits Enabled by Stress‐Diffusive Manipulation

Published: 2020-09-02

DOI: 10.1002/adma.202003276

Affiliations: 4

Authors: 8

Institutions	Authors	Share
School of Electrical and Electronics Engineering, CAU, South Korea		0.63
School of Advanced Materials Science and Engineering (AMSE), SKKU, South Korea		0.19
Department of Engineering, University of Cambridge, United Kingdom (UK)		0.13
Advanced Institute of Nanotechnology (SAINT), SKKU, South Korea		0.06

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