Lateral 2D WSe2 p–n Homojunction Formed by Efficient Charge‐Carrier‐Type Modulation for High‐Performance Optoelectronics

Journal: Advanced Materials

Published: 2020-01-20

DOI: 10.1002/adma.201906499

Affiliations: 4

Authors: 12

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Institutions Share
Beihang University (BUAA), China 0.42
Tsinghua University, China 0.25
Beijing Institute of Nanoenergy and Nanosystems (BINN), CAS, China 0.17
Beijing National Laboratory for Condensed Matter Physics, IOP CAS, China 0.17