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Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability

Journal: Advanced Materials

Published: 2019-07-16

DOI: 10.1002/adma.201902551

Affiliations: 3

Authors: 4

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Institutions Share
Division of Electrical Engineering, University of Cambridge, United Kingdom (UK) 0.50
Advanced Technology Institute (ATI), University of Surrey, United Kingdom (UK) 0.25
Department of Electrical and Electronic Engineering (EEE), University of Surrey, United Kingdom (UK) 0.25

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