Metal-Halide Perovskites for Gate Dielectrics in Field-Effect Transistors and Photodetectors Enabled by PMMA Lift-Off Process

Journal: Advanced Materials

Published: 2018-06-01

DOI: 10.1002/adma.201707412

Affiliations: 3

Authors: 9

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Institutions FC
Electronics Laboratory (IfE), ETH Zurich, Switzerland 0.56
EPFL Group for Molecular Engineering of Functional Materials (GMF), Switzerland 0.22
EPFL Laboratory of Photonics and Interfaces (LPI), Switzerland 0.22