Metal-Halide Perovskites for Gate Dielectrics in Field-Effect Transistors and Photodetectors Enabled by PMMA Lift-Off Process

Journal: Advanced Materials

Published: 2018-06-01

DOI: 10.1002/adma.201707412

Affiliations: 3

Authors: 9

Go to article
Institutions FC
Electronics Laboratory (IfE), ETH Zurich, Switzerland 0.56
EPFL Group for Molecular Engineering of Functional Materials (GMF), Switzerland 0.22
EPFL Laboratory of Photonics and Interfaces (LPI), Switzerland 0.22

Return