Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Journal: Advanced Materials

Published: 2018-02-13

DOI: 10.1002/adma.201705193

Affiliations: 8

Authors: 16

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Institutions FC
CAS Key Laboratory of Microelectronics Devices and Integrated Technology, IME CAS, China 0.38
School of Electronic, Electrical and Communication Engineering (EECE), UCAS, China 0.20
Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), China 0.10
State Key Laboratory of Functional Materials for Informatics, SIMIT CAS, China 0.09
Department of Nuclear Engineering, TAMU, United States of America (USA) 0.06
Materials Science and Technology Division (MST), LANL, United States of America (USA) 0.06
Department of Physics, WHU, China 0.05
Hubei Key Laboratory of Nuclear Solid Physics, WHU, China 0.05

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