Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202104174
Affiliations:
3
Authors:
9
Institutions Authors Share
Chungbuk National University, South Korea
7.000000
0.78
Korea Institute of Materials Science (KIMS), South Korea
2.000000
0.22