Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

Journal: Advanced Functional Materials

Published: 2018-07-01

DOI: 10.1002/adfm.201800657

Affiliations: 7

Authors: 11

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Institutions FC
Salerno Research Unit, SPIN CNR, Italy 0.32
Department of Physics 'E.R. Caianiello', UNISA, Italy 0.23
Istituto Nazionale di Ricerca Metrologica (INRIM), Italy 0.18
Engineering Product Development (EPD), SUTD, Singapore 0.14
Department of Energy Science (DOES), SKKU, South Korea 0.09
National Laboratory of Solid State Microstructures (NLSSM), NJU, China 0.05

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