A High-k Fluorinated P(VDF-TrFE)-g-PMMA Gate Dielectric for High-Performance Flexible Field-Effect Transistors

Journal: Advanced Functional Materials

Published: 2017-12-01

DOI: 10.1002/adfm.201704780

Affiliations: 4

Authors: 5

Go to article
Institutions FC
Department of Energy and Materials Engineering, Dongguk University, South Korea 0.40
Low Dimensional Carbon Materials Center, UNIST, South Korea 0.20
Perovtronics Research Center, UNIST, South Korea 0.20
Department of Energy Engineering, UNIST, South Korea 0.20